单频半导体激光器
产品特点
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波长范围：976nm、1030/1033nm、1060/1064nm
封装模式：14 PIN 蝶形封装
输出功率：5mW~750mW
工作环境温度：-10～+50℃
脉冲测试边模抑制比：≥40dB@DFB
小体积，高稳定性
高边模抑制比
高电光转换效率
封装模式：14 PIN 蝶形封装
输出功率：5mW~750mW
工作环境温度：-10～+50℃
脉冲测试边模抑制比：≥40dB@DFB
小体积，高稳定性
高边模抑制比
高电光转换效率
产品概述
高功率单模蝶形封装DFB激光器采用高气密14针蝶形封装形式，组件内部内置制冷器（TEC），热敏电阻，PD等附加功能，经过严格的性能、可靠性测试，保障了激光器的高稳定性及可靠性。激光器具有线宽窄，功率高等特性，主要作为脉冲窄带宽光纤激光器和直接频率转换应用的光源应用。
规格参数
| 光电特性参数/ Optical Electrical Characteristics | 符号/Symbol | 1030nm DFB 50 | 1030nm DFB 100 | 1030nm DFB 200 | 单位/Unit | |||
| 测试条件 | 典型/Type | 测试条件 | 典型/Type | 测试条件 | 典型/Type | |||
| /Test Conditions | /Test Conditions | /Test Conditions | ||||||
| 中心波长/Center Wavelength | λC | TLD=25℃ | 1030 | TLD =25℃ | 1030 | TLD =25℃ | 1030 | nm |
| 波长调谐范围/Wavelength Tuning Range | ∆λ | — | 2 | — | 2 | — | 2 | |
| 峰值光功率/Peak Output Power | PP | TLD=25℃ | 50 | TLD=25℃ | 140 | TLD=25℃ | 210 | mW |
| 边模抑制比/ Side-mode Suppression Ratio | SMSR | PO =50mW | 40 | PO =100mW | 40 | PO =200mW | 40 | dB |
| 偏振消光比/ Polarization Extinction Ratio | PER | PO =50mW | 20 | PO =100mW | 20 | PO =200mW | 20 | |
| 斜率效率/Slope Efficiency | SE | PO =50mW | 0.2 | PO =100mW | 0.26 | PO =200mW | 0.26 | W/A |
| 温度波长系数/Wavelength Temp. Coefficient | dλ/dT | — | 0.07 | — | 0.07 | — | 0.07 | nm/℃ |
| 阈值电流/Threshold Current | Ith | TLD =25℃ | 45 | TLD =25℃ | 45 | TLD =25℃ | 45 | mA |
| 正向工作电压/ Forward Operating Voltage | Vop | PO =50mW | — | PO =100mW | — | PO =200mW | — | V |
| 正向工作电流/ Forward Operating Current | Iop | PO =50mW | 300 | PO =100mW | 225 | PO =200mW | 370 | mA |
| 出光功率/Output Power | Pp | TLD =25℃ | — | TLD=25℃ | — | TLD=25℃ | — | mW |
| MPD工作电压/MPD Operating Voltage | Vmon | PO =50mW | 5 | PO =100mW | 5 | PO =200mW | 5 | V |
| MPD响应度/MPD Responsiveness | Imon/Pop | — | — | — | — | — | — | uA/mW |
| 热敏电阻BETA值/Thermistor BETA Value | β | — | 3930 | — | 3930 | — | 3930 | K |
| 热敏电阻电流/Thermistor Current | Ither | — | — | — | — | — | — | mA |
| 光电特性参数/ Optical Electrical Characteristics | 符号/Symbol | 1064nm DFB 50 | 1064nm DFB 100 | 1064nm DFB 200 | 单位/Unit | |||
| 测试条件/Test Conditions | 典型/Type | 测试条件/Test Conditions | 典型/Type | 测试条件/Test Conditions | 典型/Type | |||
| 中心波长/Center Wavelength | λC | TLD =25℃ | 1064 | TLD =25℃ | 1064 | TLD =25℃ | 1064 | nm |
| 波长调谐范围/Wavelength Tuning Range | ∆λ | — | 2 | — | 2 | — | 2 | |
| 出光功率/Output Power | Pp | TLD =25℃ | — | TLD =25℃ | 100 | TLD=25℃ | — | mW |
| 边模抑制比/ Side-mode Suppression Ratio | SMSR | PO =50mW | 55 | PO =100mW | 40 | PO =200mW | 40 | dB |
| 偏振消光比/ Polarization Extinction Ratio | PER | PO =50mW | 20 | PO =100mW | 20 | PO =200mW | 20 | |
| 斜率效率/Slope Efficiency | SE | PO =50mW | 0.18 | PO =100mW | 0.5 | PO =200mW | 0.5 | W/A |
| 温度波长系数/Wavelength Temp. Coefficient | dλ/dT | — | 0.07 | — | 0.07 | — | 0.07 | nm/℃ |
| 阈值电流/Threshold Current | Ith | TLD =25℃ | 45 | TLD =25℃ | 45 | TLD =25℃ | 45 | mA |
| 正向工作电压/ Forward Operating Voltage | Vop | PO =50mW | — | PO =100mW | — | PO =200mW | — | V |
| 正向工作电流/ Forward Operating Current | Iop | PO =50mW | 300 | PO =100mW | 300 | PO =200mW | 400 | mA |
| MPD工作电压/MPD Operating Voltage | Vmon | PO =50mW | 5 | PO =100mW | 5 | PO =200mW | 5 | V |
| MPD响应度/MPD Responsiveness | Imon/Pop | — | — | — | — | — | — | uA/mW |
| 热敏电阻BETA值/Thermistor BETA Value | β | — | 3930 | — | 3930 | — | 3930 | K |
| 热敏电阻电流/Thermistor Current | Ither | — | — | — | — | — | — | mA |
